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TI assembly and test plant employees
Texas Instruments (TI) announced that it has quadrupled its own manufacturing capacity for GaN (gallium nitride)-based power semiconductors through its Aiju plant in Japan. This expansion begins production in Japan alongside the company’s existing facility in Dallas, Texas, providing TI with a broader portfolio of GaN-based semiconductors.
TI begins stable mass production with 200mm GaN technology
“Based on more than 10 years of GaN chip design and manufacturing expertise, TI has successfully validated cost-competitive 200mm GaN technology and has begun mass production at our Aiju plant,” said Mohammad Yunus, senior vice president of TI. He also explained, “This expansion will enable TI to increase its internal manufacturing ratio to more than 95% by 2030 and strengthen its supply of energy-efficient, high-power semiconductors.”
The strengths of GaN technology and TI’s portfolio
GaN is a material that replaces existing silicon and offers outstanding advantages in energy efficiency, switching speed, and performance under high temperature and high voltage conditions. This technology contributes to increasing power density and reducing product size in a variety of applications, including power adapters, heating and cooling systems, and home appliances. TI offers a portfolio of integrated GaN-based power semiconductors across a wide range of voltages from low to high voltage.
Stable supply of high-performance semiconductors and market response
“TI’s GaN technology enables us to efficiently deliver more power in less space,” said Cannon Saundarapandian, vice president of TI’s High Voltage Power Division. He continued, “TI’s GaN-based chips will provide high power density and convenience to customers who face the challenge of reducing power consumption and increasing energy efficiency in various systems such as server power, solar power generation, and AC/DC adapters.” said.
Employees at TI Japan Aiju manufacturing facility
Employees at TI Japan Aiju manufacturing facility
Proprietary GaN-on-Silicon process and enhanced reliability
TI’s GaN semiconductors are designed to operate stably in high-voltage systems through the GaN-on-silicon process. With more than 80 million hours of reliability testing and integrated protection functions, TI’s GaN semiconductors are positioned as a solution that combines high performance and safety.
Scalable GaN manufacturing and a sustainable future
TI has improved product performance and productivity and maximized environmental benefits through the latest GaN manufacturing equipment and efficient processes. Through design innovations that pack more power into smaller chips, we are realizing sustainable manufacturing by reducing the use of water, energy, and raw materials during the production process. TI plans to offer GaN chips above 900V in the future, which is expected to increase power efficiency in a variety of applications such as robotics, renewable energy, and server power.
Successful pilot for 300mm GaN manufacturing process transition
TI successfully completed a pilot for a 300mm wafer-based GaN manufacturing process earlier this year. This will enable conversion to 300mm technology and expansion of production in the future, laying the foundation for flexibly responding to customer needs.
Responsible manufacturing and renewable energy goals
As part of TI’s commitment to sustainable manufacturing, TI plans to use 100% renewable electricity at its U.S. operations by 2027 and globally by 2030. The expansion and innovation of GaN technology reflects TI’s vision for responsible manufacturing and a sustainable future.
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