The procedure will be used for DDR5, LPDDR5T and HBM3E memories.
SK Hynix announced that their fifth-generation, 10 nm class, 1bnm manufacturing technology has been completed, on which DDR5, LPDDR5T and HBM3E memories will be produced in the first round.
According to the South Korean company – on the Intel Sapphire Rapids platform – they have already succeeded in validating DDR5 server memory that operated at an effective clock rate of 6.4 GHz, thereby increasing performance by 33% compared to the previous solution.
The company will also use the new production process for the new LPDDR5T chips and HBM3E, with the latter the data transfer speed of over 1 TB/s projected onto a memory stack will certainly become available, but the more precise specifications are not yet public.
In addition to the above, the 1bnm node also results in roughly 20% lower consumption compared to the 1anm, so the progress is also considerable in terms of energy efficiency.
2023-05-31 15:41:00
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