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30.01.2024 00:35, Mykola Khizhnyak
Samsung has opened a new research laboratory in the United States, The Korea Times reports, citing its sources. The company, located in Silicon Valley, develops 3D DRAM memory technologies as part of the Device Solutions America program. According to the publication, the task of the new Samsung laboratory is to make the company a leader in the global 3D DRAM memory market.
Image Source: Samsung
3D DRAM is a DRAM that is supposed to be produced using 3D transistor technology instead of the current planar layout. The goal of the 3D manufacturing process is to more efficiently exploit the physical limitations of chips by vertically stacking additional layers of memory cells or entire chips on top of each other.
An example of 3D RAM technology is 3D V-Cache technology, which is used in AMD Ryzen X3D consumer processors, as well as in some of its server chips. In this case, 3D V-Cache is an additional layer of L3 cache that is layered on top of the processor’s main L3 cache layer.
The Korea Times recalls that Samsung was the first company to introduce three-dimensional NAND flash memory technology, which the company calls V-NAND, more than a decade ago. It is still used in solid-state drives today. In addition, other manufacturers have also mastered the production of 3D NAND flash memory, and every year they are increasing the number of layers – in modern chips their number has exceeded 230.
3D cache manufacturing technology has proven its effectiveness in the processor segment. Samsung said back in October 2023 that the three-dimensional structure of RAM crystals, produced using technical processes thinner than 10 nm, would in the future make it possible to create more capacious DRAM memory chips with a density exceeding 100 Gbits per chip.
