Samsung has announced the development of a new generation of random access memory that will offer electronics very fast performance and large data preview capabilities.
And Samsung has indicated on its websites that its collaboration with AMD has resulted in the production of the first 16GB DDR5 random access memory chip, developed on 12nm technology.
According to company experts, the new random access memories will form the basis for the second generation of computers, data centers and modern electronics that rely on artificial intelligence.
Available information indicates that the new memory differs from current DDR5 memory in approximately 20% lower power consumption, faster handling of Internet data, and will deliver speeds of up to 7.2GB/s, which will enable and downloading high data -resolution large video up to 30GB at a time.
Samsung is expected to launch these memories in 2023 with a variety of processors and electronic chips also developed with 12nm technology.
