This is not the first time we have written about the deployment of EUV production at Samsung in the generation of so-called 1x-nm class production, ie with 10-19nm processes:
But there is one catch. In a March 2020 press release, Samsung used different terminology (1x / 1y / 1z / 1a processes) than it does now (14nm), so it cannot be said with 100% certainty that what it was talking about in March 2020 and what it announced in early 2021 , is in fact the same thing he is informing about now, only with a 2-3 quarter delay. However, this is quite probable, and the fact that he changed the terminology (so that at first glance the press does not show the delay) indirectly confirms this.
“14nm process” in this context should be understood as the whole 14nm generation, including its derivatives, which in another context would be referred to as (eg) 12nm, 12nm + or 11nm process.
Thus, in October 2021, Samsung has announced the start of large-scale production of DDR5 on the EUV derivative of the 14nm process. He talks about the highest density in the memory production segment, productivity increased by 20% and consumption reduced by 20% compared to the previous process. These numbers are quite possibly possible; compared to last year’s report, however, the data on shortened development time fell out, which (as indicated by the almost three-quarter delay) probably did not work out. The manufacturer expects to achieve up to 7.2 Gb / s (DDR5-7200) for DDR5 in the described process, ie more than double DDR4 with 3.2 Gb / s (DDR4-3200).
As a target segment, Samsung primarily lists AI and 5G systems and also talks about expanding its product portfolio to support data centers, supercomputers and enterprise servers. He assumes that in the future he will be able to reach a capacity of 24Gb (3GB) per chip with this process.
Intel processors will be among the first products to support DDR5 memory Alder Lake a AMD Rembrandt.
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