Samsung and SK Hynix are expected to unveil the latest memory solutions at the IEEE-SSCC 2024 conference, scheduled to take place between February 18 and 22.
The two companies have a huge number of modern technologies and various memory solutions that include DDR5, GDDR7, HBM3E, HBM4, etc., as expectations indicate that Samsung will introduce GDDR7 memory, which was able to achieve amazing and unprecedented transfer rates.
The first product that Samsung will announce is the upcoming 3D NAND flash memory with a 280-layer design and a size of 1 terabit, which paves the way to enhance the performance of the next generation of SSD storage disks and smartphones.
It should be noted that the fastest types of 3D NAND flash memory used in SSD NVMe disks rely on transfer rates of up to 2.4 Gbit/s, which confirms that we are facing a qualitative leap in the performance of SSD disks.
Samsung will also showcase a new next-generation DDR5 memory chip with a frequency of up to 8,000 MHz and a density of 32 gigabytes per chip. This chip will be made with a manufacturing precision of 10 nanometers, and Samsung has worked to improve it specifically for DRAM memories.
Samsung will also reveal the latest generation of GDDR7 memory dedicated to the upcoming RTX 50 graphics cards from NVIDIA and AMD Radeon RX 8000 graphics cards. This memory is expected to have double the data transfer rate compared to the current GDDR6 memory.
While SK Hynix will unveil GDDR7 memory with a data transfer rate of up to 35.4 Gbit/s, with a density of 16 Gbit per chip. SK Hynix will use PAM3 technology and a different way to manage memory power consumption.
SK Hynix will also showcase a new HBM3E memory design with a 16-layer 48GB stack capable of achieving memory bandwidth of up to 1280GB/s per stack. The GPU equipped with four HBM3E stacked memory chips can have a size of 192 GB and a memory bandwidth of up to 5.12 TB/s. (Arab Technical News Portal)
