The method of optical spectroscopy for studying the properties of memristors made it possible to take a fresh look at the processes taking place in them. Physicists have used this non-destructive method to study the mechanisms of drift and the formation of oxygen bubbles in the active region of memristors. Job published In the magazine Nature electronics.
Properties memristora hidden in its name – it has memory and resistance. Memory is directly related to hysteresis the nature of the dependence of the current through the memristor on the voltage applied to it. This means that the resistance of the element will depend on what happened to it before. If you first pass the current through the memristor in one direction and then measure its resistance, then it will not coincide with what happens when the current is passed in the opposite direction. Thus, it is possible to set a certain state of the memristor, which it will store even without energizing it. And computers with memristors as RAM will not require the system to be loaded, because even after shutdown they will store information about their last state.
It took scientists 37 years to move from theory to practice and create an element that could demonstrate some of the properties of a memristor. Typically, a memristor consists of two electrodes, to which a voltage can be applied, and an active layer between them. Conductive filaments can appear or disappear between the electrodes, which are most often represented by bridges of oxygen ions. Sometimes ions can oxidize and lead to the formation of oxygen bubbles, which affects the operation of the device as a whole. All these processes need to be studied and investigated in order to create more perfect elements. However, methods for measuring the characteristics of memristors often have many disadvantages and can be destructive.